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> 3A112ACH microwave diode 4PCS matched
3A112ACH microwave diode 4PCS matched
Gallium arsenide, planar-epitaxial, mixing with a Schottky barrier type
Designed to work in hybrid integrated circuits, micromodule, nodes and blocks of 3-centimeter wavelength range.
Parameter (measurement mode), a unit of measurement
Conversion loss, (R =400 Ohm, R =100 Ohm, =3 mWt, =3,2 0,06 sm), dB
Normalized noise ratio (R =100Ohm, =3 mWt, =3,2 0,06 sm)
Output resistance (R =100 Ohm, =3 mWt, =3,2 0,06 sm), Ohm
Standing wave ratio of voltage (R =100Ohm , =3 mWt, =3,2 0,06 sm)
Rectified current ( R =10Ohm , =3 mWt, =3,2 0,06 sm)
